PRELIMINARY STUDY OF MICROSTRUCTURE DEPENDENCE OF MAGNETORESISTANCE BEHAVIOR ON Sm.-xLaxMo2Ge2 COMPOUND WITH X= O, lo, 3

PRELIMINARY STUDY OF MICROSTRUCTURE DEPENDENCE OF MAGNETORESISTANCE BEHAVIOR ON Sm La Mn Ge COMPOUND WITH x= Ol--O. 3. We present the microstructure dependence of magnetoresistance I.', 2 2 behavior in Sml., La, Mn2Ge2 compound with x= 0.1~ 0.3. We found that in bulk samples after milling and cold pressing P= 10 tonlcm2 the magnetoresistance properties have improved from 0.6% to almost 7% with the adding of La concentration 10%, 20% and 30%. The bulk samples were prepared by tri arc melting, melted 4-5 times with the Ti addition for oxygen getter. After that, the samples were annealed for 96 hours at 900 C at the vaccum furnace to make a good homogeneity. X-ray diffraction measurement was done using Cu target then the data was refined by Rietan software. Scanning electron micrograph data a pellet samp. les were taken by SEM 515 from Phillips company with two thousands magnification and operation power 20keV. From the micrograph results, it was shown that the granular diameter increases with the Lanthanum content. In this preliminary study we can conclude the magnetoresistance behavior is related to the density of samples and also to the fraction of primary phase of Sm La Mn Ge Analysis on this magnetoresistance behavior with magnetic granular solid model can help understanding this