Soetedjo, Hariyadi and Siswanto, Bambang and Aziz, Ihwanul and Sudjatmoko, sudjatmoko (2018) Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering. Elsevier Science Direct, 8. pp. 903-907.
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Abstract
Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.
Item Type: | Article |
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Subjects: | Taksonomi BATAN > Isotop dan Radiasi Taksonomi BATAN > Isotop dan Radiasi > Produksi Isotop dan Sumber Radiasi > Akselerator Taksonomi BATAN > Rekayasa Perangkat dan Fasilitas Nuklir Taksonomi BATAN > Rekayasa Perangkat dan Fasilitas Nuklir |
Divisions: | BATAN > Pusat Sains dan Teknologi Akselerator IPTEK > BATAN > Pusat Sains dan Teknologi Akselerator |
Depositing User: | Administrator Repository |
Date Deposited: | 03 Jun 2018 10:26 |
Last Modified: | 02 Jun 2022 03:17 |
URI: | https://karya.brin.go.id/id/eprint/2770 |