In our work we compare and improve some analyses including the explanation from previous work reported by Zheng et al. (2016), Touati et al. (2016) and Huang et al. (2013).
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We introduce the encouraging results of doping method using dc sputtering technique (for PbS thin films) that is considered to be the first time reported. Even, for the resistivity measurement we obtained the relatively low result compare than previous reports. Detail explanation could be another interesting point to consider.
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We introduce a new method of doping mechanism by putting a dopant material plate on the surface of target directly.
Abstract
Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.
