Al-Doped SnO2 as Transparent Heater: Influence of Deposition Time

The research on transparent heater (Thf) films rapidly increases due to their unique photoelectric properties, leading to new generation of optoelectronic device. Here, we report a simple method to fabricate transparent heater based on Al-doped SnO2 (ASO) thin films. ASO films with 5 wt% Al as dopant were synthesized with various deposition times, namely, 5, 10 and 15 minutes using ultrasonic spray pyrolysis method. The correlation of deposition time on their structural characteristic, optical, electrical and thermal properties has been investigated. X-ray diffraction studies found that all samples exhibit tetragonal structure with preferred orientation along (110) plane. Meanwhile, the UV-Vis transmittance indicated that the sample having good optical transparency in visible light spectrum with the average transmittance up to 89.7%. The sheet resistance of ASO thin films was found to decrease as the deposition time increases to 10 minutes. Furthermore, Al-doped SnO2 based transparent heater prepared with 10 minutes deposition time presents the excellent thermal temperature up to 76.3 °C at the applied voltage of 20 volt. The above findings reveal that Al-doped SnO2 can be used as an alternative compound to substitute higher cost indium tin oxide as transparent heater.