Transient‐Current Technique Characterization of Diamond Detector and Proposal of a Diamond Detector with Charge Amplification

Diamond holds promise as a potential candidate for future particle detectors owing to its remarkable electronic, mechanical, and thermal properties. However, a notable limitation is the need for a comprehensive model characterizing intrinsic diamond detectors. To address this, a specialized model integrated into the technology computer-aided design simulation program is developed. The model's validation is accomplished through its application to the evaluation of an intrinsic diamond detector. Our investigation emphasizes three key attributes: charge carrier mobility, charge carrier lifetime, and the effective charge density within the bulk material. These attributes are carefully assessed using the transient current technique. Furthermore, our model serves as a valuable tool in the analysis of the quality of an high-pressure high-temperature diamond crystal and in the optimization of a diamond detector's design, exploiting the charge multiplication effect. This comprehensive methodology advances our grasp of diamond detector behavior and facilitates the development of even more sophisticated devices.