ZnO‐based memristor for random number generator: The case of current compliance

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Hajiabadi, Zohreh and Purnama, Irwan and Nugroho, Asep and Cao, Hanyu and Chandrasekaran, Sridhar and Mukhtar, Husneni and Georgiadou, Dimitra G. and Chong, Harold M. H. and Thomas, David B. and Simanjuntak, Firman M. (2025) ZnO‐based memristor for random number generator: The case of current compliance. Electronics Letters, 61 (1). ISSN 0013-5194

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Official URL: https://doi.org/10.1049/ell2.70165

Abstract

This study aims to exploit the resistance states of Cr/ZnO/TiN memristors to generate random numbers. A random number generator (RNG) circuit employing a single memristor is proposed. We suggest that current compliance (CC) is a significant parameter in determining the quality of randomness; it is found that low CCs (20-50 µA) have a wide resistance state distribution that facilitates random bits. This work provides insight into the implementation of memristors for data security applications.

Item Type:	Article
Subjects:	Electrotechnology Computers, Control & Information Theory Materials Sciences
Depositing User:	Rizzal Rosiyan
Date Deposited:	06 Oct 2025 03:14
Last Modified:	06 Oct 2025 03:14
URI:	https://karya.brin.go.id/id/eprint/54441

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