STUDI TENTANG PENGARUH "FLUENS" TERHADAP KONSENTRASI PHOSPHOR DAN EFFEKNY A PADA "DARK BAND" DI DALAM Si

STUDI TENTANG PENGARUH "FLUENS" TERHADAP KONSENTRASI PHOSPHOR DAN EFFEKNYA PADA "DARK BAND" DI DALAM Si. Telah dilakukan penelitian pengaruh "fluence" terhadap konsentrasi fosfor claneffeknya pacta "dark band" di dalam silikon pacta CIP di RSG-Serpong dengan bantuan alat SEM clan perhitungan. P-Si di iradiasi dengan fluence yang berbeda-beda yaitu 4,41 x 1018n em-" ;3,67 x 1018n em-"; 2,94 x 1018n em-" clan 2,2 x 1018n em-". Secara kwalitatif diperoleh hasil bahwa konsentrasi fosfor adalah 9,0846 x 1014atom/em"; 7,5602 x 1014 atom/em"; 6,0564 x 1014atom/em" daD 4,532 x 1014atom/cm2. Hasil ini menunjukkan bahwa hubungan konsentrasi fosfor daD"fluens" di CIP tidak linier. Interaksi elektronelektron dari phosphor terhadap "conduction band" clan"valence band" di diskusikan. Pengamatan dengan SEM menunjukkan adanya "defect" pacta permukaan silikon, sehingga mengganggu pengamatan "band" pactapermukaan silikon.
ABSTRACT STUDY ABOUT THE INFLUENCE OF FLUENCE TO PHOSPHOR CONCENTRATION AND THE EFFECT ON DARK BAND IN SILICON. The influence of fluence to phophor concentration and the effect on dark band in silicon in the CIP in RSG - Serpong with SEM technique and calculation is studied. Several ptype silicon samples are irradiated with differences fluens 4.4 x 1018n em-";3.67 x 1018 n em-";2,94 x 1018n em-"daD2.2 x 1018n em-", respectively. Qualitatively, the results of phosphor concentrations are 9.0846 x 1014atom/em"; 7.5602 x 1014atom/em"; 6.0564 x 1014atom/cm2 and 4.532 x 1014atom/em". This result shows that the correlation between fluens and phosphor concentration is not linear. The interaction between electrons from phosphor to conduction band and valence band is discussed. Observation with SEM shows that there are defects on the silicon surface, and these defects disturb the observation on the dark band and bright band on the silicon surface.