CRYSTALLOGRAPHIC CHARACTERISTICS OF ZnO THIN FILMS DEPOSITED ONTO GLASS SUBSTRATES BY DC-MAGNETRON SPUTTERING

CRYSTALLOGRAPHIC CHARACTERISTICS OF ZnO THIN FILMS
DEPOSITED ONTO GLASS SUBSTRATES BY DC-MAGNETRON SPUTTERING.
High quality ZnO thin films were deposited onto glass substrates by dc-magnetron sputtering.
It was found that the characteristics of ZnO films depend on the deposition parameters
obtained. Those parameters are temperature, pressure, gas mixture, and magnetron variation.
By adjusting these parameters, ZnO thin films with an extremely sharp X-ray diffraction peak
with an 0.4840
full widt h at half-maximum were obtained. The resistivity of the deposited ZnO
films from target ZnO on substrate temperature 4300C is 0.307.103W.cm, and the resistivity of
the deposited ZnO films from Zn target with 20% O2 at substrate temperature 4300C
is 0.106.102W.cm.
The crystallographic properties of ZnO thin films formed by the magnetron sputtering
technique were investigated using X-ray diffraction, SEM (scanning electron microscopy) and
UV-spectrophotometer.
As the substrate temperature increases, the (002) diffraction peak becomes
progressively more dominant and at temperature near 4300C the films are strongly textured
with preferential orientation along the (002) axis. This result indicates that the c-axis of the
ZnO thin films is oriented almost normal to the substrate. When the sputtering gas pressure is
6x10-2
Torr, the (002) diffraction peak is very strong and when gas pressure is high
(up to 10x10-2Torr) the diffraction peak is very weak. The crystallites reorient themselves so
that the c-axis is normal to the substrate as new surface layers are formed.
Keywords: ZnO Thin Films, crystallographic, dc-magnetron sputtering