Interfacial Engineering Using Low-Temperature Indium Sulfide Electron-Transporting Material for Efficient Sn-Based Perovskite Solar Cells

The urgent necessity to remove dangerous lead from the commonly used metal halide perovskite solar cells (PSCs) requires the exploration of effective and reliable lead-free perovskite substitutes. In this study, we conduct a performance analysis of Sn-based PSCs incorporating a low-temperature indium sulfide electron transporting layer (ETL) and use SCAPS-1D simulation to evaluate the PSC performance. We investigate multiple parameters that determine the PSC performance, such as the thickness and defect density of the Sn-based perovskite layer, as well as the defect density at the ETL/perovskite interface. The optimization procedure produced outstanding outcomes with maximum power conversion efficiency (PCE) of 21.57%, 24.03%, and 21.93% for CsSnI3, FASnI3, and MASnI3, respectively. The proposed device structure and parameters could potentially advance the experimental work and provide a new approach for optimizing the construction of Sn-based PSCs, thereby opening up new possibilities for future study in this field.