Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2

B.  Berghoff; S.  Suckow; R.  Rölver; B.  Spangenberg; H.  Kurz; A.  Dimyati; J.  Mayer

doi:10.1063/1.2992057

Abstract

Charge transport through

Si O_{2} ∕ Si ∕ Si O_{2}

double-barrier structures (DBSs) and

Si O_{2}

single-barrier structures is investigated by low temperature

I - V

measurements. Resonant tunneling signatures accompanied by a negative differential conductance are observed if silicon quantum dots (Si QDs) are embedded in the amorphous

Si O_{2}

matrix. The

I - V

characteristics are correlated with the morphology of Si QDs extracted from transmission electron microscopy and photoluminescence. Evidence for phonon-assisted tunneling at low voltages has been found in the DBSs. These results show the potential but also the limitation for charge extraction from Si QDs embedded in

Si O_{2}

.

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Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in $Si O_{2}$

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