SrTiO3 Thin Films Deposition Using Pulsed Laser Deposition Technique

Dinari, Pia; Chandra, Christian; Suwardy, Joko; Mustofa, Salim; Darma, Yudi

doi:10.4028/www.scientific.net/AMR.789.72

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HomeAdvanced Materials ResearchAdvances in Materials, Processing and...SrTiO3 Thin Films Deposition Using Pulsed Laser...

SrTiO₃ Thin Films Deposition Using Pulsed Laser Deposition Technique

Abstract:

Strontium titanate (SrTiO₃) thin film has been deposited on Si (100) substrate using pulsed laser deposition technique. Film deposition was carried out at low temperature (150°C) by maintained the pressure at 10^-4 Torr. Nanometer-thick SrTiO₃ film on Si substrate was characterized using SEM, AFM, XRD, and Raman Spectroscopy. SEM and AFM images show that SrTiO₃ film has growth on Si substrate uniformly. Raman and XRD spectroscopy also support the growth of SrTiO₃ film on Si substrate. Furthermore, to investigate the effect of post-deposition thermal annealing, the samples were annealed up to 900°C. Thermal stability of SrTiO₃/Si structure was studied by mean XRD spectra. The X-Ray Diffraction pattern indicates the crystallinity improvement through atomic arrangements during thermal annealing process.

Info:

Periodical:

Advanced Materials Research (Volume 789)

Main Theme:

Advances in Materials, Processing and Manufacturing

Edited by:

Akhmad Herman Yuwono

Pages:

72-75

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.789.72

Citation:

P. Dinari et al., "SrTiO₃ Thin Films Deposition Using Pulsed Laser Deposition Technique", Advanced Materials Research, Vol. 789, pp. 72-75, 2013

Online since:

September 2013

Authors:

Pia Dinari, Christian Chandra, Joko Suwardy, Salim Mustofa, Yudi Darma

Keywords:

Annealing, Pulsed Laser Deposition, SrTiO₃ Thin Films, Structure Properties, Thermal Stability

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References

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Paper TitlePages

Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC

Authors: A. Trinchi, W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S.J. Ippolito, K. Kalantar-Zadeh, G. Sberveglieri

Abstract: The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

123

Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

Authors: Hai Yi Li, Yan Lai Wang, Shi Liang Ban, Yi Min Wang

Abstract: CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO₄ and CS (NH₂)₂. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

1406

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li

Abstract: Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

822

Multilayer Synthesized CuInSi Composite Film by Magnetron Sputtering

Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li

Abstract: Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of CuInSi nanocomposite films was detected by X-ray diffraction (XRD), the peak of main crystal phase is at 2θ=42.180°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, differed from the needle shape which was the morphology of the CuInSi film prepared by magnetron co-sputtering.

2770

Thin CuInSi Film Deposited by Magnetron Co-Sputtering

Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan

Abstract: Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N₂ atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In₂O₃ and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

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